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 Optimization Of Thickness Of Sb2Te3 Thin Film As Back Contact For CdTe Thin Film Solar Cells

Shailaja Jeetendra, Naveen C. Shivappa, Raghu Patel, Mahesh H. Matt

DOI: 10.5185/amlett.2014.7589

Keywords:

Antimony telluride; Sb2Te3; thermal evaporation; optical band gap; work function; electrical characteristics. 

Abstract: 

 Sb2Te3 thin films of different thickness ranging from 100 to 500nm were prepared on glass substrate by thermal evaporation method. The effects of thickness on structural, optical and electrical properties of thin films were studied. XRD revealed that grain size increases from 1.1nm to 98.7nm with increase in film thickness. The internal strain and dislocation density decreased with increase in film thickness. The optical band gap decreases from 1.3 to 0.9eV with increase in film thickness. AFM images indicated crystalline nature of Sb2Te3. Surface roughness increased up to 400nm after which it decreased. The resistivity decreases with increase in thickness at room temperature ranging from 2.9×10-3 to 1.35×10-4 Ω cm. The work function and barrier height decreases as the film thickness increases from 5.45 to 5.05eV and barrier height from 0.3 to -0.1eV. The results elucidate that Sb2Te3 back contact of 400nm thickness is ideal and efficient to be used in CdTe solar cell.

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