Indian materials smart materials
News Insight

Advanced Materials World Congress will be held in Stockholm, Sweden during 23-26 August 2015.

Online Advertising

Adv Mat Lett is an official journal of IAAM

VBRI Press is a member of CrossRefDOAJ
Adv Mat Lett is a member of DOAJ

fullabstractpdf

Get PDF

Full Article abstractpdf

Get PDF

Simulation Study Of Influence Of Al, Si And B On The Growth Of TiC

Haimin Ding, Kaiyu Chu, Jinfeng Wang

Volume 2, Issue 6, Page 425-428 | DOI: 10.5185/amlett.2011.2230

Keywords: Ceramics; simulation and modeling; crystal growth

Abstract: 

The influence of Al, Si and B on the growth of TiC is studied in this article. It is found that the adsorption of Al is more favorable on TiC {111} than that on {001}. Therefore, under the influence of it, the growth rate of {111} will be accelerated and result in the decreasing of the relative growth rate between {001} and {111}. Therefore, TiC will grow into truncated-octahedron. But when TiC is formed under the influence of Si and B, they will grow into hexagonal platelets due to the preferential adsorption of Si and B on {011} and {001}. Copyright©2011 VBRI press.

fullabstractpdf

Get PDF

Full Article abstractpdf

Get PDF

Full Article