TiO2 Modified ZnO Thick Film Resistors As Ammonia Gas Sensors
V. S. Kalyamwar, F. C. Raghuwanshi
Volume 4, Issue 12, Page 895-898, Year 2013 | DOI: 10.5185/amlett.2013.4456
ZnO nanostructure; TiO2 modified ZnO thick films; ammonia sensor; room temperature gas sensor.
Zinc oxide nanostructures were synthesized by chemical route method. The XRD spectrum indicates that the sample is wurtezite (hexagonal) structured ZnO with lattice constants of a = 3.249A0, c = 5.206 A0. Thick films of synthesized ZnO were prepared by screen printing technique. The TiO2 modified ZnO were obtained by dipping them into an aqueous solution of titanium tetrachloride for different interval of time. Gas sensing properties of pure and modified ZnO thick films were investigated. The TiO2 modified ZnO thick film dipped for 5 min were observed to be more sensitive as compared to other modified thick films at 1250C. The effect of surface microstructure and TiO2 concentrations on the sensitivity, selectivity, response and recovery of the sensor in the presence of NH3 and other gases ware studied and discussed. Copyright © 2013 VBRI press.