Azimuthal Angle Dependence Of Nanoripple Formation On Si(100) By Low Energy Ion Erosion
Sarathlal K.V, Satish Potdar, Mohan Gangrade, V. Ganesan, and Ajay Gupta
Volume 4, Issue 6, Page 398-401, Year 2013, Ion Beam Special Issue | DOI: 10.5185/amlett.2012.ib.102
Keywords: Nanoripple patterns; ion-beam irradiation; crystallographic orientation; atomic force microscopy.
Generation of self organized nanoripple patterns on Si (100) single crystal surface using low energy Ar ion beam erosion has been studied. Ion energy and ion fluence dependence of the ripple pattern is in general agreement with the reported works. However, it is found that at relatively low fluences, the pattern formation depends upon the direction of the projection of the ion beam on Si surface with respect to its crystallographic orientation. Ripple formation is facilitated if the projection of ion beam on the sample surface is along (010) direction as against (011) direction. For higher ion fluence, when the Si surface layer is fully amorphized, pattern formation is independent of the azimuthal direction of the ion beam. Copyright © 2013 VBRI press.