Preparation And Characterization Of The Chromium Doped ZnTe Thin Films
Dinesh C. Sharma, Subodh Srivastava, Y. K. Vijay and Y. K. Sharma
Volume 4, Issue 1, Page 68-70 | DOI: 10.5185/amlett.2013.icnano.118
Keywords: ZnTe:Cr thin films; XRD; UV-Vis spectrophotometer; I-V characteristics.
The chromium doped zinc telluride (ZnTe:Cr) as well as ZnTe thin films and their sandwich structures were prepared onto glass substrate by thermal evaporation method under the vacuum of 10-5 Torr. We have studied the structural, optical and electrical properties of thermally evaporated Cr-doped ZnTe thin films as a function of Cr concentration. XRD measurements show that Cr-doped ZnTe films possess the mix phase of cubical and hexagonal structure of ZnTe thin film. The optical energy band gap (Eg) calculated from the optical absorption spectra which was observed around 2.57 eV for undoped ZnTe, and reduced to 1.47 eV for the Cr-doped thin films. The result of I-V characteristics is also presented in this paper. Copyright © 2013 VBRI press.