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Deposition Of PZT Thin Films With (001), (110), and (111) Crystallographic Orientations And Their transverse Piezoelectric Characteristics

 

D. Ambika, V. Kumar, K. Tomioka, Isaku Kanno

Volume 3, Issue 2, Page 102-106, Year 2012 | DOI: 10.5185/amlett.2011.7281

Keywords: PZT; preferentially oriented thin films; transverse piezoelectric coefficient; fatigue; domain switching

Abstract: 

Pb(ZrxTi1-x)O3 [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}-orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse piezoelectric coefficient e31* of the films have been determined. The largest e31* was found in {110}-oriented film. The differences observed in e31* have been explained on the basis of domain wall contributions which are dependent on film texture. The influence of thin film texture on polarization switching characteristics have also been studied. Copyright © 2012 VBRI Press.

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